Abstract: This paper describes the scope of evaluating the testbehaviour of IGBT (Insulated gate bi-polar transistor) under the controlled test set-up environment subjected to various temperature. The thermal imbalance is highly maintained in order to compare the variations in the parameters of the IGBT while testing. Controlled temperature plays a vital role while testing IGBTs for parallel operation in high power applications. The implementation of such system in a production environment leads to increase in output yield, superior quality and reliability. The evaluation of IGBTs static behaviour is done using Compact real time input output module (NI-CRIO).

Keywords: Controlled temperature, IGBT, NI-CRIO, static.