Abstract: This paper present a Fine Trench power MOSFET with having low On-state resistance for high voltage applications. Day to day advancement in silicon power MOSFET highly improved performance has been achieved with vertical structure of Trench gate. Recent research in metal oxide semiconductor field effect transistor enables very compact high efficient system design with enhanced power gain for high voltage isolated devices. The proposed novel fine Trench MOSFET is designed with n- epitaxial layer between two Trench gate. The deep Trench high voltage isolated design is simulated with SILVACO TCAD simulator.
Keywords: Fine Trench MOSFET, SILVACO TCAD, Deep Trench Architecture, On-state Resistance.