An Investigation of new combination of PIN diode for RF Microwave Switch

Abstract: This paper presents a new combination of PIN diode switch for low insertion loss and high isolation. The combination is designed for frequency 0.1 to 10 GHz. In new combination we connect the two series-shunt combination one is across the input port and the other one is across the output port with one shunt diode connect between two λ/4 micro strip line. It has been concluded that in new combination the isolation increase and insertion loss decrease as compare to the previous combinations designed. In previous combinations we get ≈25db isolation, but the new combination give the isolation ≈ 76db which is much better compare to previous isolation.

Keywords: PIN Diode EM Simulation, insertion loss, isolation.