Charge Based Modelling for the Semiconductor Substrate of the Ferroelectric Field Effect Transistor (FEFET)

Abstract: This paper presents the modelling of FEFET by using the BSIM for the semiconductor layer while dealing with the Landau – Khalatnikov formulation for the Ferroelectric layer. Results are presented for the simulation for the charge-based evaluation of the semiconductor substrate, while the challenges to be addressed for the FE layer are enumerated.

Keywords: Ferro-Electric Field Effect Transistor, Landau – Khalatnikov Formulation, Berkeley Short Channel IGFET Model (BSIM), Interstitial Layer, Polarization of Domains.