Drain Current Model of Graphene Channel G4-FET and Gate-All-Around MOSFET

Md. Rakibul Alam; Tyafur Rahman Pathan; Hamidur Rahman

doi:10.17148/IJIREEICE.2018.6101

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Drain Current Model of Graphene Channel G4-FET and Gate-All-Around MOSFET

Md. Rakibul Alam, Tyafur Rahman Pathan, Hamidur Rahman

Downloads: Download PDF|DOI: 10.17148/IJIREEICE.2018.6101

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Abstract: Potential distribution and Wave function distribution are obtained by solving 2-D Poisson-Schrödinger equation using COMSOL with MATLAB. Conduction band profile and carrier density are investigated. Drain current of Graphene Channel Four Gate Transistor (G4-FET) and Gate-All-Around (GAA) MOSFET are calculated and compared.

Keywords: Four Gate Transistor (G4-FET), Gate-All-Around (GAA), 2-D Poisson-Schrödinger equation, potential distribution, Wave function distribution, Drain current

How to Cite:

[1] Md. Rakibul Alam, Tyafur Rahman Pathan, Hamidur Rahman, “Drain Current Model of Graphene Channel G4-FET and Gate-All-Around MOSFET,” International Journal of Innovative Research in Electrical, Electronics, Instrumentation and Control Engineering (IJIREEICE), DOI: 10.17148/IJIREEICE.2018.6101

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