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International Journal of Innovative Research in Electrical, Electronics, Instrumentation and Control Engineering
International Journal of Innovative Research in Electrical, Electronics, Instrumentation and Control Engineering A monthly Peer-reviewed & Refereed journal
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← Back to VOLUME 13, ISSUE 8, AUGUST 2025

Implementation of an amorphous silicon carbide, ultra-high-speed switch for improving FPGA’s interconnect switching

Dr Evangelos I. Dimitriadis

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Abstract: A novel solution for improving FPGA’s operation is proposed here, for the first time. The use of a crystalline silicon based switch, which incorporates in fabrication procedure a 0.1 microns thin film of amorphous silicon carbide, is presented in this paper. The above switch exhibits a rise time value of about 10ps, which is the lowest ever reported and compared with switching time of 50-300ns of MOSFETs used in FPGAs interconnect switching, can lead to very fast FPGA’s operation. The switch can be triggered from OFF to ON state by using a gate electrode. It can also be triggered by incident light, thus making it capable for future FPGAs photonic application.

Keywords: FPGAs, interconnect switches, amorphous silicon carbide ultra-high-speed switch.

How to Cite:

[1] Dr Evangelos I. Dimitriadis, “Implementation of an amorphous silicon carbide, ultra-high-speed switch for improving FPGA’s interconnect switching,” International Journal of Innovative Research in Electrical, Electronics, Instrumentation and Control Engineering (IJIREEICE), DOI: 10.17148/IJIREEICE.2025.13801

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