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International Journal of Innovative Research in Electrical, Electronics, Instrumentation and Control Engineering
International Journal of Innovative Research in Electrical, Electronics, Instrumentation and Control Engineering A monthly Peer-reviewed & Refereed journal
ISSN Online 2321-2004ISSN Print 2321-5526Since 2013
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← Back to VOLUME 13, ISSUE 8, AUGUST 2025

POWER CONSUMPTION COMPARISON OF COVENTIONAL AND SINGLE-ENDED 6T SRAM CELL USING CMOS

G.S. Sunitha, Bhoomika E, Bhoomika H, Chandan D S, Laxmi B Daddi

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Abstract: This project focusses on analysing memory systems' power usage utilising both single-ended and typical 6T SRAM cells. SRAM, or static random-access memory, is crucial for contemporary computer systems where power efficiency is a top priority. The traditional 6T SRAM cell uses a differential read method, which increases power consumption while offering great stability. The single-ended 6T SRAM cell, on the other hand, has a simpler read operation, which drastically lowers layout complexity and power consumption. The power dissipation of the two systems is assessed and compared in this study using simulation-based techniques. The results emphasise the limitations in power efficiency, showing that traditional 6T SRAM may be more appropriate for situations where power consumption is less crucial, while single-ended 6T SRAM cells are more suited for power-sensitive applications like low-power Internet of Things devices.

Keyword: SRAM Power Analysis, 6T SRAM Cell, Single-Ended SRAM, Low-Power Memory Design.

How to Cite:

[1] G.S. Sunitha, Bhoomika E, Bhoomika H, Chandan D S, Laxmi B Daddi, β€œPOWER CONSUMPTION COMPARISON OF COVENTIONAL AND SINGLE-ENDED 6T SRAM CELL USING CMOS,” International Journal of Innovative Research in Electrical, Electronics, Instrumentation and Control Engineering (IJIREEICE), DOI: 10.17148/IJIREEICE.2025.13823

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