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International Journal of Innovative Research in Electrical, Electronics, Instrumentation and Control Engineering
International Journal of Innovative Research in Electrical, Electronics, Instrumentation and Control Engineering A monthly Peer-reviewed & Refereed journal
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← Back to VOLUME 2, ISSUE 1, JANUARY 2014

Review Paper on Memristor MOS Content Addressable Memory

S.K.NANDA, PAYAL P.HARNE

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Abstract: The ongoing development of networks such as internet also takes about the need for being able to design new component or circuits that are able to exist together with CMOS process technology as CMOS scaling begins to slow down. This paper provides a review on the various memory devices and basic introduction of the proposed Memristor based content addressable memory (CAM) for future high performance search engine using VLSI technology. Memristor is nonlinear resistor which acts as memory. Therefore designing MCAM based on VLSI improves the speed, low power consumption, and reduces size. Further designing CAM based on memristor increases the packing density, provides for the new approaches towards power management through disabling CAM blocks without loss of stored data, reduces power dissipation, and has scope for speed improvement as the technology matures

Keywords: Content addressable memory (CAM), memory; memory-resistor based CAM (MCAM), MICROWIND3.1 software, modeling.

How to Cite:

[1] S.K.NANDA, PAYAL P.HARNE, β€œReview Paper on Memristor MOS Content Addressable Memory,” International Journal of Innovative Research in Electrical, Electronics, Instrumentation and Control Engineering (IJIREEICE)

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