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CMOS and DTMOS Sense Amplifier for SRAM Application
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Abstract: In this paper comparison between CMOS and DTMOS amplifiers for SRAM application using 180nm technology is done. The tool used for simulation is Cadence Tool. The power dissipation varies with variation in supply voltage. The delay and average power dissipated for various values of power supply has been discussed and reported. The DTMOS sense amplifier is preferred at lower supply voltages.
Keywords: Power dissipation, delay, SRAM, DTMOS, CMOS, Sense Amplifier.
Keywords: Power dissipation, delay, SRAM, DTMOS, CMOS, Sense Amplifier.
How to Cite:
[1] Komal, Dr. Neelam Rup Prakash, “CMOS and DTMOS Sense Amplifier for SRAM Application,” International Journal of Innovative Research in Electrical, Electronics, Instrumentation and Control Engineering (IJIREEICE), DOI: 10.17148/IJIREEICE.2017.5622
This work is licensed under a Creative Commons Attribution 4.0 International License.