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International Journal of Innovative Research in Electrical, Electronics, Instrumentation and Control Engineering
International Journal of Innovative Research in Electrical, Electronics, Instrumentation and Control Engineering A monthly Peer-reviewed & Refereed journal
ISSN Online 2321-2004ISSN Print 2321-5526Since 2013
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Design of Look up Table for Emerging Non Volatile Memories in FRAM

A. Ragavi, M. Arivasanth M. Tech

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Abstract: Non Volatile Memories (NVMs) can be used to implement the RAM cell in the lookup table. Here we proposed the four blocks non volatile single stage sense amplifier with voltage clamp is employed to reduce the power and area. One Transistor One Capacitor (1T1C) cell provides sufficient sense margin as a configuration bit and a Capacitor. Matched reference path is proposed to reduce the parasitic mismatch for reliable sensing. Tree multiplexer can be used non volatile memories in lookup table.

Keywords: non volatile memory, ferromagnetic memory, matched reference path.

How to Cite:

[1] A. Ragavi, M. Arivasanth M. Tech, β€œDesign of Look up Table for Emerging Non Volatile Memories in FRAM,” International Journal of Innovative Research in Electrical, Electronics, Instrumentation and Control Engineering (IJIREEICE), DOI: 10.17148/IJIREEICE.2017.5610

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