Tunnel Field Effect Transistor (TFET) I-V Characteristics and C-V Characteristics Approximation

Abstract: Tunnel Field Effect Transistor (TFET) has been extensively investigated in recent decades. TFETs set an alternative to conventional transistors. TFETs are based on diverse operating principles that include tunneling. Steep Sub threshold swing transistors based on tunneling are examined to extend the performance of a transistor. Tunnel FET is having a lesser on current, off current and Sub threshold slope than conventional MOSFETs which is found to be a latent candidate for ultra-low power device applications by the reduced sub threshold swing. This leads to the reduction of supply voltage; thereby it increases the speed of the devices.

Keywords: Subthreshold Swing, Quantum tunneling, On Current, Off Current.